| PART |
Description |
Maker |
| 1N5403K 1N5408K 1N5400K 1N5401K 1N5402K 1N5404K 1N |
20-Bit FET Bus Switch with -2 V Undershoot Protection 48-SSOP -40 to 85 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AC
20-Bit FET Bus Switch with -2 V Undershoot Protection 48-TVSOP -40 to 85 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-204AC
20-Bit FET Bus Switch with -2 V Undershoot Protection 48-TSSOP -40 to 85 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-204AC
20-Bit FET Bus Switch with -2 V Undershoot Protection 48-TVSOP -40 to 85 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-204AC
20-Bit FET Bus Switch with -2 V Undershoot Protection 48-TSSOP -40 to 85 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC
Standard silicon rectifier diodes
|
SEMIKRON[Semikron International]
|
| MC10XS3435BHFK MC10XS3435DHFK |
Quad High Side Switch (Dual 10 mOhm, Dual 35 mOhm)
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| 10XS341212 MC10XS3412DHFK MC10XS3412CHFK |
Quad High Side Switch (Dual 10 mOhm, Dual 12 mOhm)
|
Freescale Semiconductor, Inc
|
| 16XSD200 |
Dual 16 mOhm High Side Switch
|
Freescale Semiconductor, Inc
|
| STH130N10F3-2 STFI130N10F3 STF130N10F3 |
N-channel 100 V, 7.8 mOhm typ., 120 A STripFET(TM) Power MOSFET in H2PAK-2 package
N-channel 100 V, 7.8 mΩ typ., 120 A STripFET?III Power MOSFET in TO-220FP, I2PAKFP, H2PAK-2 and TO-220 packages
N-channel 100 V, 8 mOhm typ., 46 A STripFET(TM) Power MOSFET in I2PAKFP package
|
STMicroelectronics
ST Microelectronics
|
| STH110N10F7-2 STH110N10F7-6 |
High avalanche ruggedness
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-6 package
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| SPB100N08S2L-07 SPP100N08S2L-07 |
Low Voltage MOSFETs - TO220/263; 100 A; 75V; LL; 6.8 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPB100N06S2-05 SPP100N06S2-05 |
Low Voltage MOSFETs - TO220/263; 100 A; 55V; NL; 5 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
